Bi2Se3 is a topological insulator. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Bi2Se3 belongs to the group-15 post-transition metal trichalcogenides.

The Bi2Se3 crystals produced at HQ Graphene have a typical lateral size of ~0.6-0.8 cm, rectangular shaped and have a metallic appearance.

硒化鉍晶體 Bi2Se3 (Bismuth Selenide)
晶體尺寸：10毫米
電學(xué)性能：拓?fù)浣^緣體
晶體結(jié)構(gòu)：菱面體
晶胞參數(shù)：a = b = 0.413, c = 2.856 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a Bi2Se3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 6 XRD peaks correspond, from left to right, to (00l) with l = 6, 9, 12, 15, 18, 21, 24 

XRD of a single crystal Bi2Se3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

EDX of a single crystal Bi2Se3.

Raman of a single crystal Bi2Se3. Measurement with a 785nm Raman at room temperature.