生產(chǎn)廠商：HQ Graphene

產(chǎn)品信息

ReS2 is a direct-bandgap semiconductor of ~1.35 eV. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Rhenium Disulfide belongs to the group-VII transition metal dichalcogenides (TMDC). 
The ReS2 crystals produced at HQ Graphene typically look similar to a flower with a lateral size of ~-0.8 cm, where multiple single crystals resemble the petals and the appearance is dark metallic. We produce n-type ReS2, having a typical charge carrier density of ~10¹⁷cm^-3 at room temperature.

二硫化錸晶體 ReS2 (Rhenium Disulfide)
晶體結(jié)構(gòu)：三斜晶晶體尺寸：~8毫米
電學性能：N型半導體
晶體結(jié)構(gòu)：三斜晶系
晶胞參數(shù)：a = 0.634, b = 0.640 nm, c = 0.645 nm, α = 106.74°, β = 119.03°, γ = 89.97°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a ReS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8

Powder X-ray diffraction (XRD) of a single crystal ReS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal ReS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal ReS2. Measurement was performed with a 785 nm Raman system at room temperature.