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NCE65T260F

N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）

Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T260D NCE65T260 NCE65T260F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 15 15* A Continuous Drain Current at Tc=100°C ID (DC) 10 10* A Pulsed drain current (Note 1) IDM (pluse) 60 60* A Maximum Power Dissipation(Tc=25℃) Derate above 25°C PD 131 1.05 33.2 0.265 W W/°C Single pulse avalanche energy (Note 2) EAS 304 mJ Avalanche current(Note 1) IAR 3 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 1.6 mJ

NCE65T260F

Parameter Symbol NCE65T260D

NCE65T260 NCE65T260F Unit

Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns

Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns

Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C

NCE65T260F

Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T260D NCE65T260 NCE65T260F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 15 15* A Continuous Drain Current at Tc=100°C ID (DC) 10 10* A Pulsed drain current (Note 1) IDM (pluse) 60 60* A Maximum Power Dissipation(Tc=25℃) Derate above 25°C PD 131 1.05 33.2 0.265 W W/°C Single pulse avalanche energy (Note 2) EAS 304 mJ Avalanche current(Note 1) IAR 3 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 1.6 mJ

NCE65T260F

Table 2. Thermal Characteristic

Parameter Symbol NCE65T260D

NCE65T260 NCE65T260F Unit

Thermal Resistance，Junction-to-Case（Maximum） RthJC 0.95 3.76 °C /W

Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 62 80 °C /W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

On/off states

Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 650 V

Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V 1 μA

Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=650V,VGS=0V 100 μA

Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 3 3.5 4 V

Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=8A 220 260 mΩ

Dynamic Characteristics

Input Capacitance Clss

VDS=50V,VGS=0V,

F=1.0MHz

1210 1400 pF

Output Capacitance Coss 74 pF

Reverse Transfer Capacitance Crss 0.2 pF

Total Gate Charge Qg

VDS=480V,ID=15A,

VGS=10V

24.7 42 nC

Gate-Source Charge Qgs 8.2 nC

Gate-Drain Charge Qgd 8.5 nC

Switching times

Turn-on Delay Time td(on)

VDD=380V,ID=8A,

RG=2.3Ω,VGS=10V

14 nS

Turn-on Rise Time tr 8 nS

Turn-Off Delay Time td(off) 55 nS

Turn-Off Fall Time tf 7 nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode) ISD

TC=25°C

15 A

Pulsed Source-drain current(Body Diode) ISDM 60 A

Forward On Voltage VSD Tj=25°C,ISD=15A,VGS=0V 0.9 1.2 V

Reverse Recovery Time trr

Tj=25°C,IF=7.5A,di/dt=100A/μs

240 nS

Reverse Recovery Charge Qrr 2 uC

Peak Reverse Recovery Current Irrm 17 A

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω