型號(hào)	MMBT5551LT1G	品牌	ON
批號(hào)	20+	封裝	SOT-23
QQ	370533363

   MMBT5550L, MMBT5551L
High Voltage Transistors
NPN Silicon
Features
? S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
CompliantMAXIMUM RATINGS Rating Symbol Value Unit Collector?Emitter Voltage MMBT5550 MMBT5551 VCEO 140 160 Vdc Collector?Base Voltage MMBT5550 MMBT5551 VCBO 160 180 Vdc Emitter?Base Voltage VEBO 6.0 Vdc Collector Current ? Continuous IC 600 mAdc Electrostatic Discharge Human Body Model Machine Model ESD > 8000 > 400 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) @TA = 25°C Derate Above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction?to?Ambient RJA 417 °C/W Junction and Storage Temperature TJ, Tstg ?55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR?5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

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