數(shù)量 16800
Drain-source voltage 900
Continuous drain current1), TC=25 °C 5
Continuous drain current1), TC=100 °C 3.2
Pulsed drain current2), TC=25 °C 15
Continuous diode forward current1), TC=25 °C 5
Diode pulsed current2), TC=25 °C 15
Power dissipation3) , TC=25 °C 83
Single pulsed avalanche energy5) 193
MOSFET dv/dt ruggedness, VDS=0…480 V 50
Reverse diode dv/dt, VDS=0…480 V, ISD≤ID 15
Operation and storage temperature -55 to 150
Thermal resistance, junction-case 1.5
Thermal resistance, junction-ambient4) 62
Drain-source leakage current 10
Gate threshold voltage 2.0
型號 OSG90R1K2KF
品牌 東微
批號 新批號
封裝 TO-263
交易說明 公司現(xiàn)貨 深圳倉
QQ 1030918574
商品介紹
OSG90R1K2KF TO-263 N溝道 900V 5AMOS管場效應管

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