單粒子效應(yīng)對(duì)應(yīng)用于航天以及核工業(yè)的芯片往往造成大危害，相對(duì)于傳統(tǒng)的粒子加速器而言，利用脈沖激光進(jìn)行檢測(cè)可以大地提率，降低成本。以下型號(hào)型號(hào)激光SEE測(cè)試儀已經(jīng)被應(yīng)用于美國(guó)公司和NASA。

We offer custom SEE laser testing solutions:

• Single photon
• Two photons
• Selection of Pico and Femto second lasers
• Shortwave 900nm to 1700nm and Visible imaging system
• Microscope objective choices; 200X, 100X, 50X 20X

Additional Features:

• High accuracy X-Y-Z motorized stages ( nm resolution) 50mm travel XYZ, 0.1micron resolution 
• Joystick for X-Y
• Tilt stat ( 3 rotation axes) manual micrometer or motorized
• Protective enclosure
• Dual microscope objective top and bottom (optional)
• Replace Synchrotron beam-line time and high cost
• For space, military, aerospace, Railways, Automotive, Avionic

Applications:

• SEU: Single Event Upset
• SET: Single Event Transient
• SEL: Single Event Latch-up
• SEGR: Single Event Gate Rupture
• SEB: Single Event Burnout
• SEGR: Single Event Gate Rupture
• SEFI: Single Event Functional Interrupt

Single‐Event Effect (SEE):  Any measurable or observable change in state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike.

Single‐Event Transient (SET):  A soft error caused by the transient signal induced by a single energetic particle strike.

Single‐Event Latch‐up (SEL):  An abnormal high‐current state in a device caused by the passage of a single energetic particle through sensitive regions of the device structure and resulting in the loss of device functionality. SEL may cause permanent damage to the device. If the device is not permanently damaged, power cycling of the device (off and back on) is necessary to restore normal operation. An example of SEL in a CMOS device is when the passage of a single particle induces the creation of parasitic bipolar (p‐n‐p‐n) shorting of power to ground.   Single‐Event Latch‐up (SEL) cross‐section: the number of events per unit fluence. For chip SEL cross‐section, the dimensions are cm2 per chip.
If the charge generated by a single high LET particle is collected by a single high LET particle is collected by a sensitive node of the device or circuit, and this charge is larger than the critical charge required to start an anomalous behaviour an effect singe even effect, may be seen affecting the electrical performance of the device or circuit such as soft errors or hard destructive errors. Space systems often require electronics that can operate in a high-radiation environment. This radiation may result from particles trapped in planetary magnetic fields (e.g., the Allen belts which affect Earth-orbiting satellites or the intense radiation fields of Jupiter and its moons), galactic cosmic rays, or high-energy protons from solar events. At low Earth orbit, an integrated circuit may be exposed to a few kilorads of radiation over its useful lifetime, while at orbits in the middle of the Allen belts, exposure levels may increase to several hundred kilorads or more. In addition to the natural space environment, military satellites must be able to survive transient bursts of radiation resulting from a hostile nuclear explosion. To achieve these higher levels, radiation-hardened integrated circuits are required. In general, these circuits are fabricated using specialized processes and designs that increase their tolerance to ionizing radiation by several orders of magnitude.

Semiconductor Failures
The primary effects of natural space radiation on spacecraft electronics are total ionizing dose (TID) and single event effects (SEE). TID creates bulk-oxide and an interface-trap charge that reduces transistor gain and shifts the operating properties (e.g., threshold voltage) of semiconductor devices. TID accumulation will cause a device to fail if (1) the transistor threshold voltage shifts far enough to cause a circuit malfunction, (2) the device fails to operate at the required frequency, and/or (3) electrical isolation between devices is lost. SEE occurs when a cosmic ray or other very high-energy particle impinges on a device. The particle generates a dense track of electron-hole pairs as it passes through the semiconductor, and those free carriers are collected at doping junctions. The net effect is that the circuit is perturbed and may lose data (called a single-event upset or SEU). The passage of a sufficiently energetic particle through a critical device region can even lead to permanent failure of an IC due to single-particle-event latchup (SEL), burnout, or dielectric/gate rupture. In general, components that exhibit SEL are not acceptable for space applications unless the latchup can be detected and mitigated. Burnout and gate rupture are especially problematic for high-voltage and/or high-current electronics associated with space-borne power supplies. SEE have become an increasing concern as ICs begin to use smaller device geometries and lower operating voltages, leading to reduced nodal capacitance and charge stored on circuit nodes. In addition to these primary effects, displacement damage effects caused by high-energy protons and electrons can reduce mission lifetimes due to long-term damage to CCDs, optoelectronics, and solar cells.